PART |
Description |
Maker |
RJK0236DPA RJK0236DPA-00-J5A |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK03P6DPA RJK03P6DPA-00-J5A |
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK03H1DPA RJK03H1DPA-00-J5A RJK03H1DPA13 |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET
|
Renesas Electronics Corporation
|
RJK03N4DPA |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
FMXB-2102 |
Fast Recovery Diode with built-in SBD for temperature detection
|
Sanken electric
|
MCH5823 |
Pch SBD MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
D4SBS4 |
Schottky Rectifiers (SBD) / SBD Bridges
|
Shindengen
|
MB40568 MB40568PF MB40568P-SK |
A/D Converter (1-channel, 8-bit low-power model with built-in clamp circuit)
|
Fujitsu Microelectronics FUJITSU[Fujitsu Media Devices Limited]
|
PU61C56 |
Power Transistor Array (F-MOS FETs) - Silicon N-Channel Power F-MOS (with built-in zener diode)
|
Panasonic
|
STA406 STA406A |
NPN Darlington With built-in avalanche diode 6 A, 70 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
|
SANKEN[Sanken electric]
|
TDA7563 E-TDA7563 |
46 W, 4 CHANNEL, AUDIO AMPLIFIER, PZFM27 MULTIFUNCTION QUAD POWER AMPLIFIER WITH BUILT-IN DIAGNOSTICS FEATURES
|
STMICROELECTRONICS 意法半导 ST Microelectronics
|